The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Jan. 18, 2022
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Thomas Bedecarrats, Grenoble, FR;

Jean Charbonnier, Grenoble, FR;

Maud Vinet, Grenoble, FR;

Hélène Jacquinot, Grenoble, FR;

Yann-Michel Niquet, Grenoble, FR;

Candice Thomas, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 48/00 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 48/383 (2025.01); H10D 30/031 (2025.01); H10D 30/6734 (2025.01); H10D 48/385 (2025.01); H10D 64/01 (2025.01);
Abstract

A spin qubit quantum device includes a semiconductor portion having a first region disposed between two second regions; a first control gate disposed in direct contact with the first region and configured to control a minimum potential energy level in the first region, and disposed in direct contact with a first face of the semiconductor portion; and second electrostatic control gates, each disposed in direct contact with one of the second regions and configured to control a maximum potential energy level in one of the second regions, and disposed in direct contact with a second face, opposite to the first face, of the semiconductor portion, The first gate is not aligned with the second gates.


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