The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Aug. 30, 2022
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Pierre-André Mortemousque, Grenoble Cedex, FR;
Benoit Bertrand, Grenoble Cedex, FR;
Baptiste Jadot, Grenoble Cedex, FR;
Tristan Meunier, Grenoble, FR;
Matias Urdampilleta, Grenoble, FR;
Maud Vinet, Grenoble Cedex, FR;
Abstract
A semiconductor device includes a layer of a semiconductor material in which is formed an active zone; a plurality of first gates forming a plurality of lines substantially parallel to each other and covering in part the active zone; a plurality of second gates forming a plurality of columns; at least one third gate, designated measurement gate, extending along an axis substantially parallel to the lines of the plurality of lines and in a direction opposite to the lines of the plurality of lines with respect to the active zone, and a first electrode and a second electrode situated on either side of the plurality of measurement gates in the active zone.