The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
May. 27, 2022
Applicant:
Commissariat À L'energie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 62/119 (2025.01); H01L 21/02532 (2013.01); H10D 30/62 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01);
Abstract
A method for manufacturing a pFET transistor, the method for manufacturing the transistor including providing a base structure comprising a silicon channel and a gate structure, the gate structure surrounding the channel leaving two flanks of the channel free; growing a first layer made from silicon-germanium alloy on the flanks of the channel; enriching the channel with germanium atoms from the first layer; and forming a drain region and a source region on either side of the channel.