Tullins, France

Cyrille Le Royer

This inventor holds 27 USPTO granted patents and 3 published patent applications and 10 EPO patents, primarily in Quantum Device Technology. Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, Centre National De La Recherche Scientifique, STMicroelectronics. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cyrille Le Royer. Retrieved from https://idiyas.com/inventor/cyrille-le-royer

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 85.2

 

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 37(Granted Patents)


Location History:

  • Tullins, FR (2014 - 2015)
  • Tullins-Fures, FR (2013 - 2021)
  • Grenoble, FR (2010 - 2024)

Company Filing History:


Years Active: 2010-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Microelectronic Device
Quantum Device
Field Effect Transistor
Semiconductor
Transistor Fabrication
Integrated Circuit
Strained Semiconductor
Carbon-Based Material
Superconductor Qubit
Air-Spacer MOS
Dynamic Memory Cell
Tunnel Effect Transistor
27 patents (USPTO):Explore Patents

Title: Cyrille Le Royer: Innovator in Quantum Device Technology

Introduction

Cyrille Le Royer, an accomplished inventor based in Tullins-Fures, France, has made significant contributions to the field of semiconductor technology. With a total of 19 patents to his name, his work primarily focuses on innovation in quantum devices and materials.

Latest Patents

Cyrille's most recent patents showcase his expertise and forward-thinking approach. His first notable invention is a method of making a quantum device, where he outlines a process for producing a quantum device that includes providing a substrate with a transistor pattern. The patented method involves forming a protective layer that prevents diffusion of metallic species and creating a superconducting region through the lateral diffusion of superconducting elements.

Additionally, he has developed a method for producing SiGe-based zones at varying concentrations of Germanium. This method includes defining regions on a Silicon-On-Insulator (SOI) substrate and forming a grating of masking patterns. By conducting vertical and horizontal diffusions, he achieves regions with distinct Germanium concentrations, which has valuable implications in semiconductor manufacturing.

Career Highlights

Cyrille Le Royer has held positions at renowned companies such as the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and STMicroelectronics S.A. His roles in these organizations reflect his commitment to advancing semiconductor technology and innovation in various applications.

Collaborations

Throughout his career, Cyrille has collaborated with talented individuals, including notable coworkers such as Nicolas Posseme and Fabrice Nemouchi. These collaborations have played an essential role in enhancing research and development efforts in the fields of quantum devices and materials.

Conclusion

Cyrille Le Royer stands out as a significant inventor in the realm of quantum technology, with his innovative methods and approaches driving progress in the industry. His 19 patents are a testament to his expertise and dedication, paving the way for future advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…