The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Nov. 29, 2019
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Nicolas Posseme, Grenoble, FR;

Louis Hutin, Grenoble, FR;

Cyrille Le Royer, Grenoble, FR;

Fabrice Nemouchi, Grenoble, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H03K 17/567 (2006.01);
U.S. Cl.
CPC ...
H01L 29/127 (2013.01); H01L 29/41775 (2013.01); H03K 17/567 (2013.01); H01L 29/4236 (2013.01);
Abstract

A process for fabricating an electronic component with multiple quantum dots is provided, including providing a stack including a substrate, a nanostructure made of semiconductor material superposed over the substrate and including first and second quantum dots and a link linking the quantum dots, first and second control gate stacks arranged on the quantum dots, the gate stacks separated by a gap, the quantum dots and the link having a same thickness; partially thinning the link while using the gate stacks as masks to obtain the link, a thickness of which is less than that of the quantum dots; and conformally forming a dielectric layer on either side of the gate stacks so as to fill the gap above the partially thinned link. An electronic component with multiple quantum dots is also provided.


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