Sassenage, France

Nicolas Posseme

This inventor holds 78 USPTO granted patents and 6 published patent applications and 47 EPO patents, primarily in Microelectronics Manufacturing (CPC class H01L). Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, Centre National De La Recherche Scientifique, Applied Materials, Inc.. Active years: 2013-2025.

USPTO Granted Patents = 78 

% Patents Active = 83.3

 

Average Co-Inventor Count = 2.2

ph-index = 5

Forward Citations = 77(Granted Patents)

Forward Citations (Not Self Cited) = 57(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Carantec, FR (2013 - 2016)
  • Sassenage, FR (2017 - 2022)
  • Grenoble, FR (2015 - 2024)

Company Filing History:


Years Active: 2013-2025

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Areas of Expertise:
Microelectronic Components
Transistor Fabrication
Quantum Devices
Dielectric Layer Etching
Surface Roughness
Graphoepitaxy
Spacers Manufacturing
Integrated Circuits
Strained Semiconductors
Carbon-Based Materials
III-V Materials
Self-Assembly
78 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Nicolas Posseme - Pioneering Innovations in Semiconductor Materials

Introduction:

Nicolas Posseme, a visionary inventor hailing from Sassenage, FR, has made significant contributions to the field of semiconductor materials with a remarkable portfolio of 67 patents. His groundbreaking work has revolutionized the way we etch and form trenches in gallium nitride (GaN)-based materials. Let's delve into the latest patents, career highlights, and collaborations of this trailblazing inventor.

Latest Patents:

Posseme's recent patents include a "Method of etching a layer based on a III-V material" and a "Method for forming trenches." The former involves a novel approach to etching GaN-based materials, utilizing implantation of hydrogen or helium ions to modify the material before selectively oxidizing and etching specific portions. The latter patent details a method for forming isolating trenches in semiconductor substrates, showcasing Posseme's ingenuity in semiconductor manufacturing processes.

Career Highlights:

Throughout his illustrious career, Nicolas Posseme has lent his expertise to renowned companies such as Commissariat à l'Énergie Atomique et aux Énergies Alternatives (CEA) and Applied Materials, Inc. His tenure at these cutting-edge institutions has been marked by his passion for innovation and his relentless pursuit of pushing the boundaries of semiconductor technology.

Collaborations:

Posseme's collaborative spirit is evident in his work alongside esteemed colleagues like Laurent Grenouillet and Lamia Nouri. Together, they have shared insights, ideas, and expertise to drive forward pioneering research in semiconductor materials. Their synergy has resulted in the development of disruptive technologies that have the potential to shape the future of the semiconductor industry.

Conclusion:

Nicolas Posseme's inventive prowess and unwavering dedication to advancing semiconductor materials have solidified his status as a trailblazer in the field. With a prolific patent portfolio and a track record of transformative innovations, Posseme continues to inspire the next generation of inventors and researchers to explore new frontiers in semiconductor technology.

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