The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Jul. 02, 2020
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Lamia Nouri, Le Kremelin Bicetre, FR;

Stefan Landis, Tullins, FR;

Nicolas Posseme, Sassenage, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/266 (2006.01); H01L 31/18 (2006.01); H01L 21/265 (2006.01); H01L 21/308 (2006.01); B81C 1/00 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); B81C 1/00031 (2013.01); H01L 21/26506 (2013.01); H01L 21/26526 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/30608 (2013.01); H01L 31/18 (2013.01); B81B 2207/056 (2013.01); H01L 33/0093 (2020.05);
Abstract

A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.


Find Patent Forward Citations

Loading…