The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Feb. 24, 2022
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Valentin Bacquie, Grenoble, FR;
Nicolas Posseme, Grenoble, FR;
Abstract
A method is provided for forming spacers of a gate of a transistor, including: providing an active layer surmounted by a gate; forming a dielectric layer covering the gate and the active layer, the dielectric layer having lateral portions and basal portions; anisotropically modifying the basal portions by implantation of light ions, forming modified basal portions; and removing the modified basal portions by selective etching, so as to form the spacers on the lateral flanks of the gate from the unmodified lateral portions, in which, before the removing step, the anisotropic modification of the basal portions includes n successive implantation phases having implantation energies Γi (i=1 . . . n) which are distinct from each other, the n phases being configured to implant the light ions at different nominal implantation depths.