The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jan. 26, 2022
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Joël Kanyandekwe, Grenoble, FR;
Cyrille Le Royer, Grenoble, FR;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02694 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 27/1203 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01);
Abstract
A method for forming SiGe-based regions with different Ge concentrations is provided. After defining the regionson a SOI substrate, a grating of masking patterns is formed on at least one region. After the epitaxial growth of a Ge-based layer in each of the regions, a first vertical diffusion is carried out. A second horizontal diffusion is then carried out such that the Ge diffuses beneath the masking patterns of the region. Thus, the regionhas a Ge concentration that is lower than the Ge concentration of the region