Method for producing a microelectronic device

Abstract

A method for forming crystalline SiC-based regions on either side of an N-type transistor channel, including: providing a substrate including a silicon-based layer having a thickness e, forming at least one masking pattern on the silicon-based layer, with the at least one masking pattern having openings, with the openings corresponding to implantation regions of the silicon-based layer, amorphising the silicon-based layer through the openings of the at least one masking pattern, in the implantation regions, to a depth d strictly less than the thickness e, so as to form amorphised implantation regions in the silicon-based layer, implanting carbon into amorphous implantation regions, performing thermal recrystallisation annealing to turn the amorphised implantation regions into crystalline SiC-based regions, the method including: after forming the crystalline SiC-based regions, forming a transistor gate on the silicon-based layer, directly at the edge of the crystalline SiC-based regions.