The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Apr. 21, 2023
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Cyrille Le Royer, Grenoble, FR;
Fabrice Nemouchi, Grenoble, FR;
Nicolas Posseme, Grenoble, FR;
Sébastien Kerdiles, Grenoble, FR;
François Lefloch, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H10N 60/01 (2023.01); H10N 60/10 (2023.01);
U.S. Cl.
CPC ...
H10N 60/0912 (2023.02); H10N 60/128 (2023.02);
Abstract
A method for making a device with superconductor qubit(s) including at least one JoFET formed by the following steps of: and wherein the materials and the thicknesses of the protective dielectric portion and of the protective dielectric layer are selected so as to prevent the laser pulse from reaching the first region, and melting the semiconductor of the second regions which forms, after cooling, a recrystallised semiconductor material having superconductor material properties.