The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Dec. 23, 2020
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Sylvain Barraud, Grenoble, FR;
François Andrieu, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H10N 70/20 (2023.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/30 (2023.02); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01); H10N 70/011 (2023.02); H10N 70/24 (2023.02);
Abstract
A device includes gate-all-around transistors and method for manufacturing such a device. A method for manufacturing a microelectronic device includes at least two transistors each comprising a channel in the shape of a wire extending in a first direction x, a gate surrounding said channel, a source and a drain, said transistors being stacked in a third direction z and each occupying a level nz (z=1 . . . 4) of given altitude in the third direction z.