The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Mar. 07, 2017
Applicants:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Stmicroelectronics Inc, Coppell, TX (US);
Inventors:
Sylvain Maitrejean, Grenoble, FR;
Emmanuel Augendre, Montbonnot, FR;
Pierre Morin, Grenoble, FR;
Shay Reboh, Grenoble, FR;
Assignees:
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
STMICROELECTRONICS Inc, Coppell, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/02 (2006.01); H01L 21/266 (2006.01); H01L 21/268 (2006.01); H01L 21/8238 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/02532 (2013.01); H01L 21/02675 (2013.01); H01L 21/266 (2013.01); H01L 21/268 (2013.01); H01L 21/823807 (2013.01); H01L 29/1054 (2013.01); H01L 29/66545 (2013.01);
Abstract
Manufacture of a transistor device with at least one P type transistor with channel structure strained in uniaxial compression strain starting from a silicon layer strained in biaxial tension, by amorphization recrystallization then germanium condensation.