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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10600786 B1

PDFFull Text
Date of Patent:
Mar. 24, 2020

Filed:

Mar. 07, 2017

Method for fabricating a device with a tensile-strained nmos transistor and a uniaxial compression strained pmos transistor

Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Stmicroelectronics Inc, Coppell, TX (US);

Inventors:

Sylvain Maitrejean, Grenoble, FR;

Emmanuel Augendre, Montbonnot, FR;

Pierre Morin, Grenoble, FR;

Shay Reboh, Grenoble, FR;

Assignees:

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;

STMICROELECTRONICS Inc, Coppell, TX (US);

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Thao X Le

Assistant Examiner:

Gardner W S. Swan

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/02 (2006.01); H01L 21/266 (2006.01); H01L 21/268 (2006.01); H01L 21/8238 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/02532 (2013.01); H01L 21/02675 (2013.01); H01L 21/266 (2013.01); H01L 21/268 (2013.01); H01L 21/823807 (2013.01); H01L 29/1054 (2013.01); H01L 29/66545 (2013.01);
Abstract

Manufacture of a transistor device with at least one P type transistor with channel structure strained in uniaxial compression strain starting from a silicon layer strained in biaxial tension, by amorphization recrystallization then germanium condensation.

Find Patent Forward Citations

Maitrejean, Sylvain. (2020). Method for fabricating a device with a tensile-strained nmos transistor and a uniaxial compression strained pmos transistor (U.S. Patent No. 10600786). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10600786

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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