The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Nov. 11, 2019
Applicant:
Stmicroelectronics, Inc., Coppell, TX (US);
Inventors:
Pierre Morin, Kessel-Lo, BE;
Nicolas Loubet, Guilderland, NY (US);
Assignee:
STMICROELECTRONICS, INC., Coppell, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 27/0886 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the channel region to generate shear and normal strain on the channel region. A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, source and drain regions adjacent the channel region, and a gate over the channel region. The fin may be canted with respect to the source and drain regions to generate shear and normal strain on the channel region.