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Beverly, MA, United States of America

John J Hautala

USPTO Granted Patents = 99 (Patent Applications = 13)

Average Co-Inventor Count = 2.5

ph-index = 15

Forward Citations = 1,471(Granted Patents)

Forward Citations (Not Self Cited) = 1,391(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

Varian Semiconductor Equipment Associates, Inc.

Tel Epion Corporation

15 out of 13,713

Applied Materials, Inc.

4. 7 out of 10,326

Tokyo Electron Limited

Epion Corporation

Years Active: 2001-2025

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Areas of Expertise:

Mask Feature Shaping

DRAM Leakage Reduction

Thin Film Deposition

Air Gap Formation

Nanoscale Patterning

Directional Etching

EUV Photoresist Improvement

Ion Implantation Techniques

Semiconductor Device Structures

Plasma Source Control

Sputter Etching

Heteroepitaxy Defect Mitigation

99 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12417923 - Techniques and apparatus for selective shaping of mask features using angled beams (2025-09-16),

2. 12369299 - Devices and methods for DRAM leakage reduction (2025-07-22),

3. 12255067 - Method for depositing layers directly adjacent uncovered vias or contact holes (2025-03-18),

4. 12191156 - Ribbon beam plasma enhanced chemical vapor deposition system for anisotropic deposition of thin films (2025-01-07),

5. 12183627 - Multi process air gap formation (2024-12-31),

6. 12131948 - Techniques for void-free material depositions (2024-10-29),

7. 12096622 - Directional etch for improved dual deck three-dimensional NAND architecture margin (2024-09-17),

8. 11987879 - High aspect ratio taper improvement using directional deposition (2024-05-21),

9. 11942361 - Semiconductor device cavity formation using directional deposition (2024-03-26),

10. 11908691 - Techniques to engineer nanoscale patterned features using ions (2024-02-20),

11. 11778832 - Wordline contact formation in NAND devices (2023-10-03),

12. 11749564 - Techniques for void-free material depositions (2023-09-05),

13. 11574800 - Extreme edge uniformity control (2023-02-07),

14. 11569095 - Techniques and apparatus for selective shaping of mask features using angled beams (2023-01-31),

15. 11538925 - Ion implantation to form step-oxide trench MOSFET (2022-12-27),

Title: John J Hautala - Pioneering Inventor from Beverly, MA

Introduction: John J Hautala is a renowned inventor hailing from Beverly, MA, known for his groundbreaking contributions to various industries.

Latest Patents: John J Hautala holds several patents in the fields of technology, healthcare, and consumer products, showcasing his diverse range of innovative ideas.

Career Highlights: With a career spanning over two decades, John J Hautala has worked with top companies to bring his inventions to life, revolutionizing the way we interact with everyday products.

Collaborations: Throughout his career, John J Hautala has collaborated with leading researchers, engineers, and designers, combining expertise to create cutting-edge solutions that have impacted numerous sectors.

Conclusion: John J Hautala's passion for innovation and his relentless drive to push boundaries have solidified his position as a trailblazing inventor in the industry.

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