The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Jun. 10, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

John Hautala, Beverly, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 76/40 (2026.01); G03F 7/20 (2006.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
H10P 76/4085 (2026.01); G03F 7/20 (2013.01); H10P 76/2041 (2026.01);
Abstract

Disclosed are approaches for forming semiconductor patterning features. One method may include providing a plurality of openings through a patterning layer of a semiconductor device, wherein each opening of the plurality of openings is defined by a sidewall of the patterning layer, and wherein the patterning layer is a resist layer or a carbon-based layer. The method may further include removing a portion of the patterning layer by directing a beam of neutral reactive radicals into the sidewall, wherein the beam of neutral reactive radicals is directed at a non-zero angle relative to a perpendicular extending from an upper surface of the patterning layer.


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Hautala, John. (2026). Patterning layer modification using directional radical ribbon beam (U.S. Patent No. 12653004). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12653004

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