The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2025

Filed:

May. 23, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

John Hautala, Beverly, MA (US);

Charith Nanayakkara, Gloucester, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01);
Abstract

Disclosed are approaches for forming semiconductor device layers. One method may include forming a plurality of openings in a semiconductor structure, and forming a film layer atop the semiconductor structure by delivering a material at a non-zero angle relative to a normal extending perpendicular from an upper surface of the semiconductor structure. The film layer may be formed along the upper surface of the semiconductor structure without being formed along a sidewall of each opening of the plurality of openings, wherein an opening though the film layer remains above each opening of the plurality of openings.


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