The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Apr. 05, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

John Hautala, Beverly, MA (US);

Tristan Y. Ma, Lexington, MA (US);

Peter F. Kurunczi, Cambridge, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); C23C 14/22 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01J 37/305 (2006.01); H01J 37/32 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); C23C 14/34 (2006.01); C23C 14/46 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C23C 14/225 (2013.01); C23C 16/45563 (2013.01); C23C 16/4583 (2013.01); C23C 16/50 (2013.01); H01J 37/3053 (2013.01); H01J 37/32458 (2013.01); H01J 37/32623 (2013.01); H01J 37/32816 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); C23C 14/3442 (2013.01); C23C 14/46 (2013.01); H01J 2237/3151 (2013.01); H01J 2237/3321 (2013.01);
Abstract

A ribbon beam plasma enhanced chemical vapor deposition (PECVD) system comprising a process chamber containing a platen for supporting a substrate, and a plasma source disposed adjacent the process chamber and adapted to produce free radicals in a plasma chamber, the plasma chamber having an aperture associated therewith for allowing a beam of the free radicals to exit the plasma chamber, wherein the process chamber is maintained at a first pressure and the plasma chamber is maintained at a second pressure greater than the first pressure for driving the free radicals from the plasma chamber into the process chamber.


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