Lexington, MA, United States of America

Tristan Yonghui Ma

This inventor holds 28 USPTO granted patents and 1 published patent application, primarily in Semiconductor Processing. Top assignees: Varian Semiconductor Equipment Associates, Inc., Applied Materials, Inc.. Active years: 2014-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tristan Yonghui Ma. Retrieved from https://idiyas.com/inventor/tristan-yonghui-ma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 96.4

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 41(Granted Patents)


Company Filing History:


Years Active: 2014-2025

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Areas of Expertise:
Dielectric Deposition
Ion Implantation
Photoresist Techniques
Anisotropic Deposition
Thin Films
NAND Devices
Patterning
Three Dimensional Structures
Critical Dimension Control
Metal Etching
EUV Photoresist
Li-Ion Battery Electrodes
28 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Tristan Yonghui Ma

Introduction

Tristan Yonghui Ma is a prominent inventor located in Lexington, MA, with an impressive portfolio of 27 patents to his name. His work primarily focuses on advanced technologies in semiconductor manufacturing, with innovations that significantly enhance the efficiency and capabilities of deposition systems used for thin film applications.

Latest Patents

Two of his latest patents showcase his innovative approaches in the field. The first patent is for a "Ribbon beam plasma enhanced chemical vapor deposition system for anisotropic deposition of thin films." This system encompasses a process chamber with a platen for substrate support and a plasma source designed to generate free radicals in a dedicated chamber. The design improves the process by allowing free radicals to exit through an aperture, optimizing the anisotropic deposition process.

The second patent is titled "Semiconductor device cavity formation using directional deposition." This invention describes methods for creating semiconductor device cavities through directional dielectric deposition. The approach involves delivering dielectric materials at specific angles relative to the surfaces of semiconductor structures, ensuring precision in the formation of dielectric layers.

Career Highlights

Tristan has had a distinguished career in the semiconductor industry, having worked with leading companies such as Varian Semiconductor Equipment Associates and Applied Materials. His expertise in deposition technologies has made him a valuable asset to these organizations, contributing significantly to advancements in semiconductor manufacturing processes.

Collaborations

Throughout his career, Tristan has collaborated with notable professionals in the field, including John J Hautala and Ludovic Godet. These partnerships have allowed for the exchange of innovative ideas and techniques, further enhancing the development of novel technologies in semiconductor processing.

Conclusion

Tristan Yonghui Ma's contributions to the field of semiconductor technology through his patents and collaborations underscore his role as a leading inventor. His innovative solutions continue to shape the future of thin film deposition and semiconductor device fabrication, cementing his legacy in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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