The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Sep. 25, 2018
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Tristan Y. Ma, Lexington, MA (US);
Juiyuan Hsu, Ithaca, NY (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
Disclosed are methods for removing bridge defects using an angled implant and selective photoresist etch. In one embodiment, a method includes providing a semiconductor device including plurality of photoresist lines on a stack of layers, wherein a bridge defect extends between two or more photoresist lines of the plurality of photoresist lines. The method may further include implanting a sidewall and an upper surface of the two or more photoresist lines with an ion beam disposed at an angle, the angle being a non-zero angle of inclination with respect to a perpendicular to a plane of the upper surface of the stack of layers. The method may further include etching the semiconductor device to remove the bridge defect.