The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Mar. 14, 2017
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Tristan Y. Ma, Lexington, MA (US);

Maureen K. Petterson, Salem, MA (US);

John Hautala, Beverly, MA (US);

Steven R. Sherman, Newton, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/32 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); H01L 21/0279 (2013.01); H01L 21/266 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32 (2013.01); H01L 21/76831 (2013.01);
Abstract

A method for patterning a substrate, comprising: providing a photoresist patterning feature on the substrate, the substrate defining a substrate plane, the photoresist patterning feature having a softening temperature below 200° C. The method may include directing a first ion species into the photoresist patterning feature during a first exposure; and depositing a sidewall layer on the patterning feature after the directing at a deposition temperature, the deposition temperature being 200° C. or greater.


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