The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Jul. 21, 2014
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Thomas R. Omstead, Gloucester, MA (US);

Simon Ruffell, South Hamilton, MA (US);

Tristan Ma, Lexington, MA (US);

Ethan A. Wright, Ipswich, MA (US);

John Hautala, Beverly, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/225 (2006.01); C23C 16/455 (2006.01); C23C 16/48 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01); H01L 21/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2253 (2013.01); C23C 16/45536 (2013.01); C23C 16/45551 (2013.01); C23C 16/486 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/32357 (2013.01); H01L 21/0217 (2013.01); H01L 21/0226 (2013.01); H01L 21/0228 (2013.01); H01L 21/02057 (2013.01); H01L 21/02112 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/02636 (2013.01); H01L 21/225 (2013.01); H01L 21/2252 (2013.01); H01L 21/31116 (2013.01); H01L 21/324 (2013.01); H01L 29/66803 (2013.01); H01L 21/2225 (2013.01);
Abstract

In one embodiment, a processing apparatus may include a process chamber configured to house a substrate and a hybrid source assembly that includes a gas channel coupled to a molecular source; and a plasma chamber configured to generate a plasma and isolated from the gas channel. The processing apparatus may also include an extraction assembly disposed between the hybrid source assembly and process chamber, coupled to the gas channel and plasma chamber, and configured to direct an ion beam to a substrate, the ion beam comprising angled ions wherein the angled ions form a non-zero angle with respect to a perpendicular to a substrate plane; and configured to direct a molecular beam comprising molecular species received from the gas channel to the substrate.


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