The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Dec. 16, 2016
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Kevin Anglin, Somerville, MA (US);
Tristan Ma, Lexington, MA (US);
Morgan D. Evans, Manchester, MA (US);
John Hautala, Beverly, MA (US);
Heyun Yin, Saugus, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A method of etching a workpiece comprising two or more materials is disclosed. The method involves using physical sputtering as the etching method where the processing parameters of the sputtering process are tuned to achieve a desired etch rate selectivity. The method includes determining the etch rate of each material disposed on the workpiece as a function of various processing parameters, such as ion species, ion energy, incidence angle and temperature. Once the relationship between etch rate and these parameters is determined for each material, a set of values for these processing parameters may be chosen to achieve the desired etch rate selectivity.