Nitin K Ingle

San Jose, CA, United States of America

Nitin K Ingle

USPTO Granted Patents = 224 

Average Co-Inventor Count = 4.2

ph-index = 100

Forward Citations = 20,269(Granted Patents)

Forward Citations (Not Self Cited) = 13,668(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Campbell, CA (US) (2003 - 2009)
  • San Jose, DE (US) (2015)
  • Santa Clara, CA (US) (2008 - 2023)
  • San Jose, CA (US) (2012 - 2023)

Company Filing History:


Years Active: 2003-2025

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Areas of Expertise:
Selective Etching
Silicon-Germanium Materials
Graphene Growth
Dynamic Random Access Memory
Batch Curing Chamber
Plasma Processing Equipment
Self-Aligned Vias
Anisotropic Material Breakthrough
Low-K Boron Carbonitride Films
Thermal Deposition
Gas-Phase Etching
Diffusion Barriers
224 patents (USPTO):Explore Patents

Title: Nitin K Ingle: Innovating the Semiconductor Industry

Introduction:

Nitin K Ingle is a prominent figure in the semiconductor industry, known for his contributions in the field of airgap formation processes and the development of hydrogen-free silicon dioxide layers. With an impressive portfolio of patents and a distinguished career, Ingle has made significant advancements in semiconductor technology. This article explores his latest patents, career highlights, and collaborations, shedding light on his remarkable contributions to the industry.

Latest Patents:

One of Ingle's noteworthy patents is on airgap formation processes. These innovative methods involve the formation of an airgap spacer on a semiconductor substrate. By utilizing different materials and carefully etching the spacer structure, Ingle's techniques successfully create airgaps, allowing for enhanced performance and efficiency in semiconductor devices.

Another significant patent by Ingle involves the development of hydrogen-free silicon dioxide layers. These low-H layers are formed using hydrogen-free silicon precursors and oxygen sources, resulting in improved stress profiles. Ingle's novel approach also includes oxide-nitride stacks with reduced stack bow after annealing, enhancing the reliability and performance of semiconductor devices.

Career Highlights:

Throughout his career, Ingle has worked with renowned companies in the industry. He has made valuable contributions during his tenure at Applied Materials, Inc. Applied Materials is a leading global provider of equipment, services, and software for the semiconductor and related industries. Ingle's contributions to the company have played a crucial role in advancing semiconductor manufacturing techniques.

Ingle has also been associated with Micro Materials Inc., a company specializing in the development of advanced materials and processes for the semiconductor industry. His expertise in the field has furthered the company's product offerings and technological advancements.

Collaborations:

During his professional journey, Ingle has collaborated with talented individuals in the industry, including Anchuan Wang and Xikun Wang. These collaborations have fostered innovation and knowledge exchange, paving the way for groundbreaking advancements in semiconductor technology.

Conclusion:

Nitin K Ingle's contributions in the field of semiconductor technology have been invaluable. With an astounding portfolio of 209 patents, including his latest patents on airgap formation processes and hydrogen-free silicon dioxide layers, Ingle has significantly influenced the industry's development. His career highlights at companies like Applied Materials, Inc., and Micro Materials Inc. showcase his expertise and dedication to advancing semiconductor manufacturing techniques. Collaborating with fellow industry professionals, Ingle continually contributes to the evolution of the industry, inspiring new innovations and driving progress in the semiconductor domain.

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