The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Sep. 14, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Lala Zhu, Fremont, CA (US);

Shi Che, Sunnyvale, CA (US);

Dongqing Yang, Pleasanton, CA (US);

Nitin K. Ingle, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/324 (2013.01);
Abstract

A semiconductor processing method may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include an exposed region of silicon-and-oxygen-containing material. The substrate may include an exposed region of a liner material. The methods may include providing a hydrogen-containing precursor to the semiconductor processing region. The methods may include contacting the substrate with the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include selectively removing at least a portion of the exposed silicon-and-oxygen-containing material.


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