The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Dec. 22, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Ashish Pal, Hayward, CA (US);
Gaurav Thareja, Santa Clara, CA (US);
Sankuei Lin, Los Gatos, CA (US);
Ching-Mei Hsu, Mountain View, CA (US);
Nitin K. Ingle, San Jose, CA (US);
Ajay Bhatnagar, Saratoga, CA (US);
Anchuan Wang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.