The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Feb. 16, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Armin Saeedi Vahdat, Burlington, MA (US);

Yan Zhang, Westford, MA (US);

John Hautala, Beverly, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); C23C 14/48 (2006.01); C23C 16/30 (2006.01); C23C 16/40 (2006.01); C23C 16/513 (2006.01); C23C 28/04 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
C23C 16/303 (2013.01); C23C 14/48 (2013.01); C23C 16/40 (2013.01); C23C 16/513 (2013.01); C23C 28/04 (2013.01); H01L 21/30604 (2013.01); H01L 21/30621 (2013.01); H01L 21/3065 (2013.01);
Abstract

Disclosed are approaches for forming semiconductor device cavities. One method may include providing a set of semiconductor structures defining an opening, wherein the opening has a first opening width along an upper portion of the opening and a second opening width along a lower portion of the opening, the first opening width being greater than the second opening width. The method may further include forming a blocking layer along the set of semiconductor structures by delivering a material at a non-zero angle of inclination relative to a normal extending perpendicular from a top surface of the set of semiconductor structures. The blocking layer may be formed along the upper portion of the opening without being formed along the lower portion of the opening, and wherein an opening through the blocking layer is present above the opening.


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