Yan Zhang

Title: Innovations of Yan Zhang

Introduction

Yan Zhang is an accomplished inventor based in Westford, MA, with a notable portfolio of six patents. Her work primarily focuses on advancements in semiconductor processing and device efficiency.

Latest Patents

One of her latest patents is titled "Carbon and boron implantation for backside chemical mechanical planarization control." This patent discloses a method of processing a workpiece that includes a backside power delivery network. The method involves forming a CMP marker layer at the depth to which the workpiece is to be thinned. This boron-rich layer serves to slow the chemical-mechanical planarization (CMP) process. To minimize the diffusion of boron, the layer is sandwiched by implants of a first species of ions, which may include carbon.

Another significant patent is "Devices and methods for DRAM leakage reduction." This patent outlines approaches for reducing gate-induced drain leakage (GIDL). The method includes forming a trench in a substrate layer and providing a first gate oxide layer along the trench's sidewall and bottom surface. It also describes the removal of the first gate oxide layer along the upper portion of the trench's sidewall and the formation of a second gate oxide layer, ensuring different dielectric constants for improved device performance.

Career Highlights

Yan Zhang is currently employed at Applied Materials, Inc., where she contributes her expertise in semiconductor technologies. Her innovative approaches have significantly impacted the efficiency and effectiveness of semiconductor devices.

Collaborations

Throughout her career, Yan has collaborated with notable colleagues, including Johannes M Van Meer and Naushad K Variam. These collaborations have fostered a dynamic exchange of ideas and advancements in their respective fields.

Conclusion

Yan Zhang's contributions to the field of semiconductor technology through her patents and collaborations highlight her role as a leading inventor. Her innovative methods continue to shape the future of device efficiency and processing techniques.