Burlington, MA, United States of America

Armin Saeedi Vahdat


Average Co-Inventor Count = 3.8

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023-2025

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5 patents (USPTO):

Title: Armin Saeedi Vahdat: Innovator in Semiconductor Technology

Introduction

Armin Saeedi Vahdat is a prominent inventor based in Burlington, MA, known for his significant contributions to semiconductor technology. With a total of five patents to his name, he has made notable advancements in the field, particularly in DRAM leakage reduction and semiconductor device architecture.

Latest Patents

One of his latest patents focuses on devices and methods for DRAM leakage reduction. This patent discloses approaches for reducing Gate Induced Drain Leakage (GIDL). In one example, the method involves forming a trench in a substrate layer, providing a first gate oxide layer along the sidewall and bottom surface of the trench, and forming a first gate material within the trench. The method further includes removing the first gate oxide layer along the upper portion of the sidewall of the trench by delivering ions at a non-zero angle relative to a perpendicular extending from the upper surface of the substrate layer. Additionally, a second gate oxide layer is formed along the upper portion of the sidewall of the trench, where the first dielectric constant of the first gate oxide layer is greater than that of the second gate oxide layer.

Another significant patent by Vahdat is related to a directional etch for improved dual deck three-dimensional NAND architecture margin. This patent describes a semiconductor manufacturing process and device that incorporates an airgap to isolate bottom implant portions of a substrate from the upper source and drain device structure. This innovation aims to reduce bottom current leakage and parasitic capacitance while improving scalability on n-to-p spacing scaling. The disclosed device can be implanted to fabricate nanosheet FETs and other semiconductor devices, with the airgap formed by etching into the substrate in both vertical and horizontal directions.

Career Highlights

Armin Saeedi Vahdat is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work has significantly impacted the development of advanced semiconductor technologies, enhancing device performance and efficiency.

Collaborations

Throughout his career, Vahdat has collaborated with notable colleagues, including John J Hautala and Johannes M Van Meer. These collaborations have contributed to the advancement of innovative solutions in semiconductor technology.

Conclusion

Armin Saeedi Vahdat's contributions to semiconductor technology through his patents and work at Applied Materials, Inc. highlight his role as a key innov

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