Yokosuka, Japan

Isaho Kamata

This inventor holds 26 USPTO granted patents and 6 published patent applications and 1 EPO patent, primarily in Silicon Carbide Technology. Top assignees: Central Research Institute of Electric Power Industry, Denso Corporation, Nuflare Technology, Inc.. Active years: 2006-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Isaho Kamata. Retrieved from https://idiyas.com/inventor/isaho-kamata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 76.9


Average Co-Inventor Count = 6.4

ph-index = 5

Forward Citations = 66(Granted Patents)


Location History:

  • Kanagawa, JP (2006 - 2021)
  • Yokosuka, JP (2010 - 2024)
  • Tokyo, JP (2012 - 2024)

Company Filing History:


Years Active: 2006-2025

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Areas of Expertise:
Silicon Carbide
Single Crystal Wafer
Epitaxial Growth
Semiconductor Device
Film Forming Apparatus
Manufacturing Method
SiC Epitaxial Wafer
Bipolar Semiconductor
Wafer Evaluation
Crystal Preparation
Film Formation
Cleaning Method
26 patents (USPTO):Explore Patents

Title: Innovative Contributions of Isaho Kamata in Silicon Carbide Technology

Introduction: Isaho Kamata, based in Yokosuka, Japan, is a prolific inventor with a remarkable portfolio of 24 patents. His work primarily focuses on advancements in silicon carbide technologies, which are essential for the semiconductor industry.

Latest Patents: His latest patents showcase innovative methods for manufacturing silicon carbide single crystal ingots and wafers. One notable method involves supplying a raw material gas to a space where a silicon carbide seed crystal is placed. A silicon carbide single crystal is grown on the seed crystal by maintaining a monosilane partial pressure of 4 kPa or more and heating the space to temperatures ranging from 2400° C. to 2700° C. The meticulous control of temperature and raw material gas supply enables the production of silicon carbide single crystal ingots with a growth length of over 3 mm and an internal stress of 10 MPa or less. In addition, he has developed a semiconductor wafer evaluation apparatus that evaluates point defects in large-diameter semiconductor wafers by using a mercury liquefied contact maker as a Schottky electrode.

Career Highlights: Throughout his career, Isaho Kamata has made significant contributions to the field of semiconductor technology while working at renowned institutions such as the Central Research Institute of Electric Power Industry and Nuflare Technology, Inc. His dedication to innovation and research has fueled advancements in the manufacturing processes of silicon carbide components.

Collaborations: Kamata has collaborated with notable colleagues in the industry, including Hidekazu Tsuchida and Masahiko Ito. These partnerships have facilitated the exchange of ideas and accelerated the development of new technologies in the semiconductor sector.

Conclusion: Isaho Kamata's impressive array of patents highlights his pivotal role in advancing silicon carbide technologies. His innovative methods for manufacturing single crystal ingots and wafers, along with his contributions to semiconductor evaluation apparatuses, demonstrate his commitment to excellence in the field. As technology continues to evolve, contributions from inventors like Kamata remain crucial in pushing the boundaries of what is possible in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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