The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Apr. 19, 2018
Showa Denko K.k., Tokyo, JP;
Central Research Institute of Electric Power Industry, Tokyo, JP;
Denso Corporation, Kariya, JP;
Keisuke Fukada, Chichibu, JP;
Naoto Ishibashi, Chichibu, JP;
Akira Bando, Chichibu, JP;
Masahiko Ito, Yokosuka, JP;
Isaho Kamata, Yokosuka, JP;
Hidekazu Tsuchida, Yokosuka, JP;
Kazukuni Hara, Kasugai, JP;
Masami Naito, Inazawa, JP;
Hideyuki Uehigashi, Nagoya, JP;
Hiroaki Fujibayashi, Kariya, JP;
Hirofumi Aoki, Toyota, JP;
Toshikazu Sugiura, Okazaki, JP;
Katsumi Suzuki, Nagakute, JP;
SHOWA DENKO K.K., Tokyo, JP;
Central Research Institute Of Electric Power Industry, Tokyo, JP;
DENSO CORPORATION, Aichi, JP;
Abstract
A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.