Inazawa, Japan

Masami Naito

USPTO Granted Patents = 21 

Average Co-Inventor Count = 5.1

ph-index = 6

Forward Citations = 365(Granted Patents)


Location History:

  • Kariya, JP (2012 - 2019)
  • Inazawa, JP (1998 - 2021)
  • Aichi, JP (2017 - 2021)

Company Filing History:


Years Active: 1998-2021

Loading Chart...
21 patents (USPTO):Explore Patents

Title: Masami Naito: Innovator in SiC Technology

Introduction

Masami Naito, based in Inazawa, Japan, is an accomplished inventor with a portfolio of 21 patents. His work primarily focuses on silicon carbide (SiC) technology, which has significant applications in the fields of electronics and materials science. Naito's innovations have contributed to advancements in semiconductor manufacturing processes, showcasing his expertise in this critical area.

Latest Patents

Among his latest patents is the "SiC epitaxial wafer and method for producing same." This invention details a novel method for producing a SiC epitaxial wafer that includes an epitaxial growth step. The method is characterized by using an Si-based raw material gas, a C-based raw material gas, and a gas that includes a Cl element. Notably, the epitaxial growth conditions are optimized to achieve a film deposition pressure of 30 torr or less, with specific ratios of Cl/Si and C/Si, and a growth rate of 50 µm/h or more, marking a significant advancement in wafer production techniques.

Another recent patent involves a "film forming apparatus" designed to enhance the efficiency of the gas flow pathways necessary for the epitaxial growth process. This apparatus features a complex supply system with multiple partitions and flow paths, ensuring precise control over the introduction of gases essential for the growth process.

Career Highlights

Naito has made notable contributions to companies such as Denso Corporation and Nuflare Technology, Inc. His work in these organizations has allowed him to leverage his skills and develop innovative solutions in SiC technology. His extensive experience in the field has positioned him as a leading figure in semiconductor research and development.

Collaborations

Throughout his career, Masami Naito has collaborated with other prominent professionals, including Hiroaki Fujibayashi and Hidekazu Tsuchida. These collaborations have enriched his work and have fostered advancements in their shared field of expertise, further strengthening the impact of their innovations.

Conclusion

Masami Naito's contributions to the field of SiC technology through his numerous patents illustrate his commitment to innovation and excellence. His work continues to influence the semiconductor industry, highlighting the importance of ongoing research and collaboration in driving technological advancements. As he progresses in his career, Naito undoubtedly will remain a key player in the evolution of electronic materials and their applications.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…