The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Feb. 09, 2010
Hiroki Watanabe, Obu, JP;
Yasuo Kitou, Okazaki, JP;
Masami Naito, Inazawa, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
In a method of manufacturing a silicon carbide single crystal, a silicon carbide substrate having a surface of one of a (-) plane and a (-) plane, where n is any integer number greater than or equal to 0, is prepared. An epitaxial layer having a predetermined impurity concentration is grown on the one of the (-) plane and the (-) plane of the silicon carbide substrate by a chemical vapor deposition method so that a threading dislocation is discharged from a side surface of the epitaxial layer. A silicon carbide single crystal is grown into a bulk shape by a sublimation method on the one of the (-) plane and the (-) plane of the epitaxial layer from which the threading dislocation is discharged.