The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2018

Filed:

Jul. 29, 2015
Applicants:

Nuflare Technology, Inc., Numazu-Shi, Shizuoka, JP;

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-Ken, JP;

Inventors:

Hideki Ito, Yokosuka, JP;

Toshiro Tsumori, Zama, JP;

Kunihiko Suzuki, Shizuoka, JP;

Hidekazu Tsuchida, Yokosuka, JP;

Isaho Kamata, Tokyo, JP;

Masahiko Ito, Yokosuka, JP;

Masami Naito, Inazawa, JP;

Hiroaki Fujibayashi, Zushi, JP;

Ayumu Adachi, Toyota, JP;

Koichi Nishikawa, Nagoya, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/32 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C30B 25/10 (2006.01);
U.S. Cl.
CPC ...
C23C 16/325 (2013.01); C23C 16/455 (2013.01); C23C 16/458 (2013.01); C23C 16/45519 (2013.01); C23C 16/45557 (2013.01); C23C 16/46 (2013.01); C30B 25/10 (2013.01);
Abstract

It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.


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