Kariya, Japan

Hiroaki Fujibayashi

USPTO Granted Patents = 15 

Average Co-Inventor Count = 5.4

ph-index = 2

Forward Citations = 16(Granted Patents)


Location History:

  • Chiryu, JP (2013 - 2017)
  • Kanagawa, JP (2017)
  • Zushi, JP (2016 - 2018)
  • Aichi, JP (2020 - 2021)
  • Kariya, JP (2018 - 2024)

Company Filing History:


Years Active: 2013-2025

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15 patents (USPTO):Explore Patents

Title: Innovations of Hiroaki Fujibayashi

Introduction

Hiroaki Fujibayashi is a prominent inventor based in Kariya, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on the development of advanced manufacturing techniques for semiconductor devices.

Latest Patents

Fujibayashi's latest patents include an "Apparatus for Manufacturing Semiconductor Device" and a "Silicon Carbide Wafer and Method for Manufacturing the Same." The apparatus for manufacturing semiconductor devices features a film formation device, along with first and second detectors that monitor the state of different regions of a substrate. This innovation allows for precise control over the film formation process based on specific detection results. The silicon carbide wafer patent describes a base wafer made of silicon carbide, doped with an n-type impurity, and an epitaxial layer that is also silicon carbide and n-type doped. This configuration is designed to meet a specific mathematical formula, ensuring optimal performance in semiconductor applications.

Career Highlights

Fujibayashi has worked with notable companies such as Denso Corporation and Nuflare Technology, Inc. His experience in these organizations has contributed to his expertise in semiconductor manufacturing and innovation.

Collaborations

Throughout his career, Fujibayashi has collaborated with esteemed colleagues, including Masami Naito and Hidekazu Tsuchida

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