The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Aug. 29, 2014
Applicant:

Nuflare Technology, Inc., Yokohama-shi, Kanagawa-ken, JP;

Inventors:

Hideki Ito, Yokohama, JP;

Kunihiko Suzuki, Shizuoka-Ken, JP;

Hidekazu Tsuchida, Yokosuka, JP;

Isaho Kamata, Tokyo, JP;

Masahiko Ito, Yokosuka, JP;

Hiroaki Fujibayashi, Zushi, JP;

Masami Naito, Inazawa, JP;

Ayumu Adachi, Toyota, JP;

Koichi Nishikawa, Nagoya, JP;

Assignee:

NuFlare Technology, Inc., Yokohama-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/46 (2006.01); C23C 16/458 (2006.01); C23C 16/455 (2006.01); C23C 16/32 (2006.01); C30B 25/10 (2006.01); C30B 25/14 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C23C 16/466 (2013.01); C23C 16/325 (2013.01); C23C 16/4586 (2013.01); C23C 16/45519 (2013.01); C23C 16/45565 (2013.01); C30B 25/10 (2013.01); C30B 25/14 (2013.01); C30B 29/36 (2013.01);
Abstract

A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.


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