The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Dec. 21, 2022
Denso Corporation, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
Hiroaki Fujibayashi, Nisshin, JP;
Masatake Nagaya, Nisshin, JP;
Junji Ohara, Nisshin, JP;
Shinichi Hoshi, Nisshin, JP;
Takashi Kanemura, Nisshin, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
Abstract
A silicon carbide wafer includes a base wafer that is made of silicon carbide and doped with an n-type impurity, and an epitaxial layer that is arranged on a main surface of the base wafer, made of silicon carbide and doped with an n-type impurity. The base wafer has a thickness t1 and an average impurity concentration n1, and the epitaxial layer has a thickness t2 and an average impurity concentration n2. The base wafer and the epitaxial layer are configured so as to satisfy a mathematical formula 1:−0.0178<0.012+(2/1)×0.057−(2/1)×0.029−{(2/1)−0.273}×{(2/1)−0.685}×0.108<0.0178. [Formula 1]