The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Dec. 08, 2015
Showa Denko K.k., Tokyo, JP;
Central Research Institute of Electric Power Industry, Tokyo, JP;
Keisuke Fukada, Chichibu, JP;
Masahiko Ito, Yokosuka, JP;
Isaho Kamata, Yokosuka, JP;
Hidekazu Tsuchida, Yokosuka, JP;
Hideyuki Uehigashi, Kariya, JP;
Hiroaki Fujibayashi, Kariya, JP;
Masami Naito, Kariya, JP;
Kazukuni Hara, Kariya, JP;
Takahiro Kozawa, Nagakute, JP;
Hirofumi Aoki, Toyota, JP;
SHOWA DENKO K.K., Tokyo, JP;
Central Research Institute Of Electric Power Industry, Tokyo, JP;
Abstract
A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.