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For the Inventor, By the Inventor

Kariya, Japan

Hideyuki Uehigashi

This inventor holds 10 USPTO granted patents and 7 published patent applications. Top assignees: Denso Corporation, Showa Denko K.k., Central Research Institute of Electric Power Industry. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideyuki Uehigashi. Retrieved from https://idiyas.com/inventor/hideyuki-uehigashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 

% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Obu, JP (2016)
  • Nagoya, JP (2021)
  • Aichi, JP (2021)
  • Kariya, JP (2019 - 2023)

Company Filing History:

goldMedal6 out of 20,407 
 
Denso Corporation
 patents
silverMedal5 out of 1,961 
 
Showa Denko K.k.
 patents
bronzeMedal4 out of 112 
 
Central Research Institute of Electric Power Industry
 patents
4. 1 out of 240 
 
Denso Corpora Tion
 patents
5. 1 out of 71 
 
Flosfia Inc.
 patents
6. 1 out of 747 
 
Nuflare Technology, Inc.
 patents
where one patent can have more than one assignee

Years Active: 2016-2026

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10 patents (USPTO):Explore Patents
1. 12581946 - Semiconductor device and power converter (2026-03-17),
2. 11846040 - Silicon carbide single crystal (2023-12-19),
3. 11618969 - SiC single crystal composite and SiC ingot (2023-04-04),
4. 11152472 - Crystalline oxide semiconductor (2021-10-19),
5. 11107892 - SiC epitaxial wafer and method for producing same (2021-08-31),
6. 11008670 - Manufacturing method of SiC ingot (2021-05-18),
7. 10896831 - Film forming apparatus (2021-01-19),
8. 10840339 - Silicon carbide semiconductor substrate and silicon carbide semiconductor device (2020-11-17),
9. 10262863 - Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus (2019-04-16),
10. 9337276 - Silicon carbide semiconductor device having junction barrier Schottky diode (2016-05-10),

Title: Innovations of Hideyuki Uehigashi

Introduction

Hideyuki Uehigashi is a prominent inventor based in Kariya, Japan. He has made significant contributions to the field of materials science, particularly in the development of silicon carbide (SiC) technologies. With a total of nine patents to his name, Uehigashi's work has had a considerable impact on various industries.

Latest Patents

Among his latest patents, Uehigashi has developed a silicon carbide single crystal that contains a heavy metal element with a specific gravity higher than that of iron. The addition density of this heavy metal element is set to at least 1×10 cm or more in the outer peripheral portion of the silicon carbide single crystal. Additionally, he has created a SiC single crystal composite that features a central portion and an outer circumferential portion, where the crystal planes of these two sections are inclined or different from each other. This innovative design includes a boundary between the two portions, with differing crystal directions.

Career Highlights

Throughout his career, Uehigashi has worked with notable companies such as Showa Denko K.K. and Denso Corporation. His experience in these organizations has allowed him to refine his expertise in materials and semiconductor technologies, contributing to advancements in the field.

Collaborations

Uehigashi has collaborated with esteemed colleagues, including Isaho Kamata and

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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