Denso Corporation

Showa Denko K.k.

Central Research Institute of Electric Power Industry

Nuflare Technology, Inc.

Denso Corpora Tion

Flosfia Inc.

Hideyuki Uehigashi

Hidekazu Tsuchida

Isaho Kamata

Masami Naito

Masahiko Ito

Kazukuni Hara

Hiroaki Fujibayashi

Keisuke Fukada

Hirofumi Aoki

Yohei Fujikawa

Takahiro Kozawa

Kunihiko Suzuki

Katsumi Suzuki

Masahiro Sugimoto

Takashi Shinohe

Isao Takahashi

Fusao Hirose

Hideo Matsuki

Tomoo Morino

Naoto Ishibashi

Junji Ohara

Yuichiro Tokuda

Naohisa Ikeya

Norihiro Hoshino

Akira Bando

Toshikazu Sugiura

Tatsuya Toriyama

A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×10cmor more.

Silicon carbide single crystal

A SiC single crystal composite includes: a central portion positioned at a center in plan view; and an outer circumferential portion surrounding an outer circumference of the central portion, in which crystal planes of the central portion and the outer circumferential portion are inclined to each other or different from each other, a boundary is present between the central portion and the outer circumferential portion, and a direction of a crystal constituting the central portion and a direction of a crystal constituting the outer circumferential portion are different from each other via the boundary.

SiC single crystal composite and SiC ingot

A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

Crystalline oxide semiconductor

A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 &#x3bc;m/h or more from an initial growth stage.

SiC epitaxial wafer and method for producing same

A manufacturing method of a SiC ingot includes a crystal growth step of growing a crystal on a principal plane having an offset angle with respect to a {0001} plane, in which, at least in a latter half growth step of the crystal growth step, after the crystal in the crystal growth step grows 7 mm or more from the principal plane, and in which, the crystal is grown by setting an acute angle, between the {0001} plane and an inclined plane which is perpendicular to a cut section cut along an offset direction and passes through both a center of a crystal growth surface and an offset downstream end portion of the crystal growth surface, to be equal to or more than an angle smaller than an offset angle by 2&#xb0; and equal to or less than 8.6&#xb0;.

Manufacturing method of SiC ingot

A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

Film forming apparatus

A silicon carbide semiconductor substrate includes a first conductivity type substrate doped with a first conductivity type impurity to have a first conductivity type and having a specific resistance of 30 m&#x3a9;cm or less. A lifetime of minority carriers in the first conductivity type substrate is set to 100 nsec or less.

Silicon carbide semiconductor substrate and silicon carbide semiconductor device

A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.

Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus

A silicon carbide semiconductor device includes a junction barrier Schottky diode including a substrate, a drift layer, an insulating film, a Schottky barrier diode, and a plurality of second conductivity type layers. The Schottky barrier diode includes a Schottky electrode and an ohmic electrode. A PN diode is configured by the plurality of second conductivity type layers and the drift layer, and the plurality of second conductivity type layers is formed in stripes only in a direction parallel to a rod-shaped stacking fault.

Silicon carbide semiconductor device having junction barrier Schottky diode

Growing community of inventors

Kariya, Japan

Hideyuki Uehigashi