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Flosfia Inc.

USPTO Granted Patents = 72

% Expired Patents = 2.8

EPO Patents = 17

Trademarks = 6

Forward Citations = 52

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52 inventors (with patents filed for the assignee):

Toshimi Hitora (37 out of 37 patents)

Takashi Shinohe (25 out of 25 patents)

Masaya Oda (22 out of 22 patents)

4. Isao Takahashi (17 out of 17 patents)

5. Masahiro Sugimoto (14 out of 52 patents)

6. Kentaro Kaneko (9 out of 9 patents)

7. Tokiyoshi Matsuda (8 out of 8 patents)

8. Shizuo Fujita (7 out of 14 patents)

9. Mitsuru Okigawa (7 out of 7 patents)

10. Yuji Kato (7 out of 7 patents)

11. Akio Takatsuka (6 out of 6 patents)

12. Yasushi Higuchi (6 out of 6 patents)

13. Shingo Yagyu (5 out of 5 patents)

14. Hiroyuki Ando (5 out of 5 patents)

15. Osamu Imafuji (5 out of 5 patents)

Core Competencies:

Semiconductor Device

Oxide Semiconductor

Film Formation

Crystalline Structure

Multilayer Structure

P-Type Semiconductor

Power Conversion

Etching Method

Doping Method

Thin Film

Thermistor Film

Crystalline Film

72 patents: Sort by Forward Citations

1. 12772501 - Power device having oxide semiconductor layer with a large band gap and field effect mobility (2026-10-20),

2. 12751220 - Crystalline oxide film and semiconductor device (2026-09-29),

3. 12690249 - Electrically-conductive metal oxide film including a metal oxide having a first metal selected from a metal of group 4 of the periodic table and a second metal selected from a metal of group 13 of the periodic table, and semiconductor element and semiconductor device including the same (2026-07-21),

4. 12690227 - Semiconductor device (2026-07-21),

5. 12597847 - Power conversion circuit, power conversion apparatus, and control system (2026-04-07),

6. 12575153 - Semiconductor element and semiconductor device (2026-03-10),

7. 12569875 - Film formation method (2026-03-10),

8. 12565714 - Film formation method (2026-03-03),

9. 12564861 - Film formation method (2026-03-03),

10. 12453108 - Semiconductor element and semiconductor device (2025-10-21),

11. 12432947 - Semiconductor device and method of manufacturing semiconductor device (2025-09-30),

12. 12402381 - Semiconductor device (2025-08-26),

13. 12289917 - Semiconductor device (2025-04-29),

14. 12284822 - Semiconductor device comprising crystalline oxide semiconductor layer and semiconductor system having the same (2025-04-21),

15. 12195844 - Method of manufacturing oxide crystal thin film (2025-01-14),

Company Overview

Flosfia Inc., based in Kyoto, Japan, specializes in advanced semiconductor technology, focusing on the development and manufacturing of innovative semiconductor devices. The company is recognized for its expertise in oxide semiconductors, which play a crucial role in enhancing power conversion efficiency and performance. Flosfia's research encompasses various core technology topics, including film formation, crystalline structures, multilayer structures, and etching methods, positioning it as a key player in the semiconductor industry.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

72 Patents

#54 in Kyoto 615-0031

#1,393 in Japan

#10,396 in the World

Flosfia Inc.

Forward Citations = 52

52 inventors:

Toshimi Hitora (37 out of 37 patents)

Takashi Shinohe (25 out of 25 patents)

Masaya Oda (22 out of 22 patents)

4. Isao Takahashi (17 out of 17 patents)

5. Masahiro Sugimoto (14 out of 52 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Flosfia Inc.. Retrieved from https://idiyas.com/company/flosfia

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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