For the Inventor, By the Inventor

Enter assignee name

Flosfia Inc.

USPTO Granted Patents = 70

% Expired Patents = 2.9

EPO Patents = 17

Trademarks = 6

Forward Citations = 52

Loading Chart...

Loading Chart...

51 inventors (with patents filed for the assignee):

Toshimi Hitora (36 out of 36 patents)

Takashi Shinohe (25 out of 25 patents)

Masaya Oda (22 out of 22 patents)

4. Isao Takahashi (17 out of 17 patents)

5. Masahiro Sugimoto (13 out of 51 patents)

6. Tokiyoshi Matsuda (8 out of 8 patents)

7. Kentaro Kaneko (8 out of 8 patents)

8. Shizuo Fujita (7 out of 14 patents)

9. Mitsuru Okigawa (7 out of 7 patents)

10. Yuji Kato (7 out of 7 patents)

11. Akio Takatsuka (6 out of 6 patents)

12. Shingo Yagyu (5 out of 5 patents)

13. Yasushi Higuchi (5 out of 5 patents)

14. Hiroyuki Ando (5 out of 5 patents)

15. Osamu Imafuji (5 out of 5 patents)

Core Competencies:

Semiconductor Device

Oxide Semiconductor

Film Formation

Crystalline Structure

Multilayer Structure

P-Type Semiconductor

Power Conversion

Etching Method

Doping Method

Thin Film

Thermistor Film

Crystalline Film

70 patents: Sort by Forward Citations

1. 12690249 - Electrically-conductive metal oxide film including a metal oxide having a first metal selected from a metal of group 4 of the periodic table and a second metal selected from a metal of group 13 of the periodic table, and semiconductor element and semiconductor device including the same (2026-07-21),

2. 12690227 - Semiconductor device (2026-07-21),

3. 12597847 - Power conversion circuit, power conversion apparatus, and control system (2026-04-07),

4. 12575153 - Semiconductor element and semiconductor device (2026-03-10),

5. 12569875 - Film formation method (2026-03-10),

6. 12565714 - Film formation method (2026-03-03),

7. 12564861 - Film formation method (2026-03-03),

8. 12453108 - Semiconductor element and semiconductor device (2025-10-21),

9. 12432947 - Semiconductor device and method of manufacturing semiconductor device (2025-09-30),

10. 12402381 - Semiconductor device (2025-08-26),

11. 12289917 - Semiconductor device (2025-04-29),

12. 12284822 - Semiconductor device comprising crystalline oxide semiconductor layer and semiconductor system having the same (2025-04-21),

13. 12195844 - Method of manufacturing oxide crystal thin film (2025-01-14),

14. 12191372 - Crystal, semiconductor element and semiconductor device (2025-01-07),

15. 12176436 - Semiconductor device and semiconductor system including semiconductor device (2024-12-24),

FLOSFIA INC. is a Japanese semiconductor company that specializes in the development of gallium oxide (Ga2O3) power devices. They are focused on creating innovative and efficient solutions for power electronics, aiming to contribute to the progress of various industries. FLOSFIA's Ga2O3 power devices offer higher energy efficiency and increased power densities, enabling improved performance in applications such as power supplies, electric vehicles, photovoltaics, and more.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 15 2026

70 Patents

#55 in Kyoto 615-0031

#1,406 in Japan

#10,607 in the World

Flosfia Inc.

Forward Citations = 52

51 inventors:

Toshimi Hitora (36 out of 36 patents)

Takashi Shinohe (25 out of 25 patents)

Masaya Oda (22 out of 22 patents)

4. Isao Takahashi (17 out of 17 patents)

5. Masahiro Sugimoto (13 out of 51 patents)

Please report any incorrect information to [email protected]

Loading…