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Flosfia Inc.

USPTO Granted Patents = 63

EPO Patents = 16

Trademarks = 8

Forward Citations = 49

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47 inventors (with patents filed for the assignee):

Toshimi Hitora (36 out of 36 patents)

Takashi Shinohe (24 out of 24 patents)

Masaya Oda (22 out of 22 patents)

4. Isao Takahashi (17 out of 17 patents)

5. Masahiro Sugimoto (11 out of 49 patents)

6. Tokiyoshi Matsuda (8 out of 8 patents)

7. Kentaro Kaneko (8 out of 8 patents)

8. Shizuo Fujita (7 out of 14 patents)

9. Akio Takatsuka (6 out of 6 patents)

10. Mitsuru Okigawa (6 out of 6 patents)

11. Shingo Yagyu (5 out of 5 patents)

12. Rie Tokuda (4 out of 4 patents)

13. Takahiro Sasaki (4 out of 7 patents)

14. Katsuaki Kawara (4 out of 4 patents)

15. Koji Amazutsumi (4 out of 4 patents)

Core Competencies:

Semiconductor Device

Crystalline Oxide Semiconductor

P-Type Oxide Semiconductor

Multilayer Structure

Oxide Semiconductor Film

Crystal Semiconductor Element

Film Forming Method

Etching Device

Crystalline Multilayer Structure

Semiconductor Apparatus

Thermistor Film

Crystalline Semiconductor Film

63 patents: Sort by Forward Citations

1. 12453108 - Semiconductor element and semiconductor device (2025-10-21),

2. 12432947 - Semiconductor device and method of manufacturing semiconductor device (2025-09-30),

3. 12402381 - Semiconductor device (2025-08-26),

4. 12289917 - Semiconductor device (2025-04-29),

5. 12284822 - Semiconductor device comprising crystalline oxide semiconductor layer and semiconductor system having the same (2025-04-21),

6. 12195844 - Method of manufacturing oxide crystal thin film (2025-01-14),

7. 12191372 - Crystal, semiconductor element and semiconductor device (2025-01-07),

8. 12176436 - Semiconductor device and semiconductor system including semiconductor device (2024-12-24),

9. 12159940 - Multilayer structure and semiconductor device (2024-12-03),

10. 12148804 - Semiconductor device including one or more p-type semiconductors provided between an n-type semiconductor layer and an electrode (2024-11-19),

11. 12107137 - Semiconductor device (2024-10-01),

12. 12107125 - Oxide semiconductor film and semiconductor device (2024-10-01),

13. 12100769 - Semiconductor device (2024-09-24),

14. 12100760 - Semiconductor device and semiconductor system including semiconductor device (2024-09-24),

15. 12033869 - Method of etching object and etching device (2024-07-09),

FLOSFIA INC. is a Japanese semiconductor company that specializes in the development of gallium oxide (Ga2O3) power devices. They are focused on creating innovative and efficient solutions for power electronics, aiming to contribute to the progress of various industries. FLOSFIA's Ga2O3 power devices offer higher energy efficiency and increased power densities, enabling improved performance in applications such as power supplies, electric vehicles, photovoltaics, and more.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

63 Patents

#44 in Kyoto 615-0031

#1,455 in Japan

#11,205 in the World

Flosfia Inc.

Forward Citations = 49

47 inventors:

Toshimi Hitora (36 out of 36 patents)

Takashi Shinohe (24 out of 24 patents)

Masaya Oda (22 out of 22 patents)

4. Isao Takahashi (17 out of 17 patents)

5. Masahiro Sugimoto (11 out of 49 patents)

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