The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Oct. 26, 2023
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Masahiro Sugimoto, Kyoto, JP;
Shinpei Matsuda, Kyoto, JP;
Yasushi Higuchi, Kyoto, JP;
Kazuyoshi Norimatsu, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01); H10P 14/20 (2026.01); H10P 14/24 (2026.01); H02P 27/06 (2006.01);
U.S. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01); H10P 14/24 (2026.01); H10P 14/3434 (2026.01); H02P 27/06 (2013.01);
Abstract
Provided a semiconductor device includes at least: a crystalline oxide semiconductor layer including a channel layer, a drift layer, and a source region; a gate electrode arranged over the channel layer across a gate insulating film; a current blocking region arranged between the channel layer and the drift layer; and a source electrode provided on the source region. The current blocking region is composed of a high-resistance layer. The source electrode forms a contact with the current blocking region.