The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
May. 27, 2022
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Masahiro Sugimoto, Kyoto, JP;
Yasushi Higuchi, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 62/80 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/6728 (2025.01); H10D 30/6757 (2025.01); H10D 62/80 (2025.01); H10D 30/031 (2025.01);
Abstract
A semiconductor device including at least a crystalline oxide semiconductor layer, which has a band gap of 3 eV or more and a field-effect mobility of 30 cm/V·s or higher.
Sugimoto, Masahiro. (2026). Power device having oxide semiconductor layer with a large band gap and field effect mobility (U.S. Patent No. 12772501). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772501
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile