The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
May. 26, 2022
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Masahiro Sugimoto, Kyoto, JP;
Yasushi Higuchi, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2024.12); H10D 30/69 (2024.12); H10D 64/60 (2024.12);
U.S. Cl.
CPC ...
H10D 30/721 (2024.12); H10D 30/6755 (2024.12); H10D 64/605 (2024.12);
Abstract
There is provided a semiconductor device comprising at least, a crystalline oxide semiconductor layer which has a band gap of 4.5 eV or more; and a field-effect mobility of 10 cm/V·s or higher.
Quick Actions:
Sugimoto, Masahiro. (2025). Semiconductor device comprising crystalline oxide semiconductor layer and semiconductor system having the same (U.S. Patent No. 12284822). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12284822
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile