The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Aug. 05, 2022
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Yusuke Matsubara, Kyoto, JP;
Osamu Imafuji, Kyoto, JP;
Hiroyuki Ando, Kyoto, JP;
Hideki Takehara, Kyoto, JP;
Takashi Shinohe, Kyoto, JP;
Mitsuru Okigawa, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 62/80 (2025.01); H10D 30/65 (2025.01);
U.S. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 62/80 (2025.01); H10D 30/657 (2025.01);
Abstract
Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, the conductive substrate having a larger area than the oxide semiconductor film.