Kyoto, Japan

Hiroyuki Ando

This inventor holds 5 USPTO granted patents and 7 published patent applications. Top assignee: Flosfia Inc.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Ando. Retrieved from https://idiyas.com/inventor/hiroyuki-ando-aauameb7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5 

% Patents Active = 60.0

Average Co-Inventor Count = 5.2

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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5 patents (USPTO):Explore Patents

Title: Hiroyuki Ando: Innovator in Semiconductor Technology

Hiroyuki Ando is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor element that enhances device performance.

Latest Patents

Hiroyuki Ando holds a patent for a semiconductor element and semiconductor device. This patent describes a multilayer structure that includes a conductive substrate and an oxide semiconductor film. The oxide semiconductor film, which is a major component, features a corundum structure. The conductive substrate has a larger area than the oxide semiconductor film, which is arranged directly on the substrate or over it via a different layer.

Career Highlights

Ando is currently employed at Flosfia Inc., where he continues to advance semiconductor technology. His work at Flosfia has positioned him as a key player in the industry, contributing to the development of cutting-edge semiconductor devices.

Collaborations

Hiroyuki Ando collaborates with talented individuals such as Yusuke Matsubara and Osamu Imafuji. These collaborations enhance the innovative potential of their projects and contribute to the advancement of semiconductor technology.

Conclusion

Hiroyuki Ando is a notable inventor whose work in semiconductor technology has led to significant advancements in the field. His patent for a semiconductor element showcases his innovative approach and dedication to improving device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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