The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jul. 27, 2022
Applicant:
Flosfia Inc., Kyoto, JP;
Inventor:
Takayoshi Oshima, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/60 (2025.01); C23C 16/04 (2006.01); C30B 29/16 (2006.01); H10D 8/01 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 8/051 (2025.01); C23C 16/04 (2013.01); C30B 29/16 (2013.01); H10D 8/60 (2025.01); H10D 64/62 (2025.01);
Abstract
A semiconductor device includes: a semiconductor film including a Schottky junction region and an Ohmic junction region; a Schottky electrode arranged on the Schottky junction region; and an Ohmic electrode arranged on the Ohmic junction region, the Schottky junction region having a first dislocation density, the Ohmic junction region having a second dislocation region, and the first dislocation density being smaller than the second dislocation density.