Company Filing History:
Years Active: 2020-2025
Title: Takayoshi Oshima: Innovator in Semiconductor Technology
Introduction
Takayoshi Oshima is a prominent inventor based in Saga, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative semiconductor devices and their manufacturing methods.
Latest Patents
Oshima's latest patents include a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device features a semiconductor film that includes both a Schottky junction region and an Ohmic junction region. The design incorporates a Schottky electrode on the Schottky junction region and an Ohmic electrode on the Ohmic junction region. Notably, the Schottky junction region has a first dislocation density that is smaller than the second dislocation density of the Ohmic junction region. Another patent involves a layered structure and a semiconductor device that includes this layered structure. This layered structure consists of a base layer and a crystalline oxide film with a corundum structure, which is arranged directly on the base layer or through an adjacent layer. The crystalline oxide film is characterized by a full width at half maximum (FWHM) of rocking curve that is 0.1° or less, as measured by ω-scan X-ray diffraction (XRD).
Career Highlights
Oshima is currently associated with Flosfia Inc., where he continues to advance semiconductor technology. His innovative approaches have positioned him as a key figure in the industry.
Collaborations
Some of his notable coworkers include Takashi Shinohe and Isao Takahashi, who contribute to the collaborative efforts in their research and development projects.
Conclusion
Takayoshi Oshima's work in semiconductor technology exemplifies innovation and dedication. His patents reflect a commitment to advancing the field, making him a noteworthy inventor in the industry.