Flosfia Inc.

Takayoshi Oshima

Takashi Shinohe

Isao Takahashi

A semiconductor device includes: a semiconductor film including a Schottky junction region and an Ohmic junction region; a Schottky electrode arranged on the Schottky junction region; and an Ohmic electrode arranged on the Ohmic junction region, the Schottky junction region having a first dislocation density, the Ohmic junction region having a second dislocation region, and the first dislocation density being smaller than the second dislocation density.

Semiconductor device and method of manufacturing semiconductor device

In a first aspect of a present inventive subject matter, a layered structure includes a base layer, and a crystalline oxide film including a corundum structure and including an r-plane as a principal plane. The crystalline oxide film is directly arranged on the base layer or through at least one layer that is adjacently arranged to the base layer, and the crystalline oxide film is with a full width at half maximum (FWHM) of rocking curve that is 0.1&#xb0; or less by &#x3c9;-scan X-ray diffraction (XRD) measurement.

Growing community of inventors

Saga, Japan

Takayoshi Oshima