The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Sep. 12, 2013
Applicant:
Denso Corporation, Kariya, Aichi-pref., JP;
Inventors:
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/16 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 29/47 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/265 (2013.01); H01L 29/06 (2013.01); H01L 29/0692 (2013.01); H01L 29/47 (2013.01); H01L 29/872 (2013.01); H01L 29/045 (2013.01);
Abstract
A silicon carbide semiconductor device includes a junction barrier Schottky diode including a substrate, a drift layer, an insulating film, a Schottky barrier diode, and a plurality of second conductivity type layers. The Schottky barrier diode includes a Schottky electrode and an ohmic electrode. A PN diode is configured by the plurality of second conductivity type layers and the drift layer, and the plurality of second conductivity type layers is formed in stripes only in a direction parallel to a rod-shaped stacking fault.